Microwave garnets
Yttrium garnets
Pure Yttrium garnets are the basic ferromagnetic materials for the whole series
of YIG - doped compositions, see example grade.
Material grade |
4pMs
G
+5% |
DH (-3dB)
Oe
no more than |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin. |
DHk
Oe
nomin. |
G-178 |
1780 |
45 |
15.1 |
2 |
2.00 |
280 |
1 |
Contents
YIG - Al doped
That series of microwave garnets is presented as the
richest product mix by saturation magnetization values. They are most widely used in low
power m-, dm-, and cm-wave devices.
Material grade |
4pMs
G |
DH (-3dB)
Oe
no more than |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin |
DHk
Oe
nomin |
GA-150 |
1500± 5% |
45 |
14.9 |
2 |
2.00 |
250 |
1 |
GA-140 |
1400± 5% |
45 |
14.8 |
2 |
2.00 |
245 |
1 |
GA-120 |
1200± 5% |
45 |
14.6 |
2 |
2.00 |
230 |
1 |
GA-110 |
1100± 5% |
45 |
14.5 |
2 |
2.00 |
220 |
1 |
GA-100 |
1000± 5% |
45 |
14.5 |
2 |
2.00 |
210 |
1 |
GA-90 |
900± 5% |
45 |
14.4 |
2 |
2.00 |
200 |
1 |
GA-80 |
800± 5% |
45 |
14.2 |
2 |
2.00 |
195 |
1 |
GA-65 |
650± 5% |
45 |
14.2 |
2 |
2.00 |
175 |
1 |
GA-58 |
580± 5% |
45 |
14.1 |
2 |
2.01 |
165 |
1 |
GA-48 |
480± 25G |
40 |
14.0 |
2 |
2.01 |
150 |
1 |
GA-40 |
400± 25G |
40 |
13.9 |
2 |
2.01 |
130 |
1.5 |
GA-32 |
320± 25G |
40 |
13.8 |
2 |
2.01 |
120 |
1.5 |
GA-20 |
200± 25G |
40 |
13.7 |
2 |
2.03 |
100 |
2 |
Contents
YIG - Ca doped
The garnets of this group feature the narrowest FMR linewidth of all YIG series.
They are especially suitable for application in microwave devices (including cryogenic
ones) having low losses and efficient in wide frequency and temperature ranges.
Material grade |
4pMs
G
+5% |
DH (-3dB)
Oe
no more than |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin |
DHk
Oe
nomin |
| *NG-195 |
1950 |
15 |
15.0 |
2 |
2.00 |
235 |
1 |
NG-190 |
1900 |
15 |
15.0 |
2 |
2.00 |
215 |
1 |
| *NG-185 |
1850 |
15 |
14.8 |
2 |
2.00 |
214 |
1 |
NG-160 |
1600 |
12 |
14.8 |
2 |
2.00 |
220 |
1 |
| *NG-140 |
1400 |
10 |
14.5 |
2 |
2.00 |
215 |
1 |
NG-120 |
1200 |
10 |
14.5 |
2 |
2.00 |
180 |
1 |
NG-100 |
1000 |
10 |
14.2 |
2 |
2.00 |
170 |
1 |
NG-80 |
800 |
10 |
14.1 |
2 |
2.00 |
160 |
1 |
NG-52 |
520 |
10 |
13.9 |
2 |
2.00 |
120 |
1 |
* - New Products (March 2000)
Contents
YIG – Gd, Al doped
The prime features of these garnets are high temperature
stability of their parameters, good squareness of hysteresis loop and raised threshold
power. They find wide application in average and high power non-reciprocal as well as
controlled microwave devices (phase shifters, switches, filter etc.).
Material grade |
4pMs
G
+5% |
DH (-3dB)
Oe
no more than |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin |
Hc
Oe
nomin |
Br
G
nomin |
DHk
Oe
nomin |
GG-178 |
1780 |
42 |
15.0 |
2 |
2.00 |
280 |
0.55 |
1240 |
2 |
GG-160 |
1600 |
45 |
14.9 |
2 |
2.00 |
280 |
0.75 |
1120 |
4 |
GG-120 |
1200 |
75 |
15.2 |
2 |
2.01 |
280 |
0.60 |
820 |
8 |
GG-95 |
940 |
95 |
15.1 |
2 |
2.01 |
255 |
0.70 |
660 |
10 |
GG-80 |
800 |
85 |
14.7 |
2 |
2.01 |
240 |
0.55 |
525 |
9 |
GG-55 |
550 |
65 |
14.5 |
2 |
2.01 |
180 |
0.55 |
385 |
8 |
GG-50 |
490 |
200 |
14.5 |
2 |
2.03 |
205 |
0.65 |
325 |
21 |
Contents
YIG - Gd, In doped
The garnets of this group have low losses with rather high
thermal stability of saturation magnetization and good threshold characteristics. They
were developed for use in non-reciprocal average power devices.
Material grade |
4pMs
G |
DH (-3dB)
Oe
no more than |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin |
DHk
Oe
nomin |
GI-138 |
1380± 5% |
20 |
15.0 |
2 |
2.00 |
240 |
5 |
GI-130 |
1300± 5% |
42 |
15.1 |
2 |
2.00 |
225 |
6 |
GI-122 |
1220± 5% |
20 |
14.9 |
2 |
2.00 |
220 |
3 |
GI-120 |
1200± 5% |
35 |
15.0 |
2 |
2.01 |
220 |
10 |
GI-115 |
1150± 5% |
35 |
15.1 |
2 |
2.00 |
230 |
7 |
GI-85 |
850± 5% |
55 |
15.0 |
2 |
2.01 |
210 |
10 |
GI-63 |
630± 5% |
48 |
14.6 |
2 |
2.01 |
150 |
14 |
GI-45 |
450± 25G |
48 |
14.5 |
2 |
2.02 |
135 |
13 |
GI-40 |
400± 25G |
95 |
14.5 |
2 |
2.03 |
160 |
13 |
Contents
YIG - for high peak power devices
The garnets of this group feature extremely good threshold
characteristics.
They are used in devices which must operate at high peak power levels.
Material grade |
4pMs
G |
DH (-3dB)
Oe
+20% |
e'
+5% |
tgde .104
no more than |
geff
+3% |
Tc
oC
nomin. |
DHk
Oe
nomin. |
| GH-178 |
1780± 5% |
25 |
15.1 |
2 |
1.99 |
280 |
3.5 |
| GH-128 |
1280± 5% |
60 |
15.1 |
2 |
2.00 |
225 |
16 |
| GH-120 |
1200± 5% |
100 |
15.0 |
2 |
2.01 |
275 |
15 |
| GH-65 |
650± 5% |
45 |
14.7 |
2 |
2.01 |
150 |
16 |
| GH-47 |
470± 25G |
45 |
14.5 |
2 |
2.00 |
130 |
19 |
| G-33 |
330± 25G |
160 |
14.2 |
2 |
2.02 |
160 |
26 |
Contents
| Products | News | Catalogs | Exhibition
| Contact Us | Site Map | Home | |
